![](/img/cover-not-exists.png)
Explicit continuous charge-based compact model for long channel heavily doped surrounding-gate MOSFETs incorporating interface traps and quantum effects
Hamzah, Afiq, Hamid, Fatimah A, Ismail, RazaliVolume:
31
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/31/12/125020
Date:
December, 2016
File:
PDF, 1.46 MB
english, 2016