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Investigation of the p-GaN Gate Breakdown in Forward-biased GaN-based Power HEMTs
Tallarico, Andrea Natale, Stoffels, Steve, Magnone, Paolo, Posthuma, Niels, Sangiorgi, Enrico, Decoutere, Stefaan, Fiegna, ClaudioYear:
2016
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2016.2631640
File:
PDF, 776 KB
english, 2016