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Double exponential I–V characteristics and double Gaussian distribution of barrier heights in (Au/Ti)/Al2O3/n-GaAs (MIS)-type Schottky barrier diodes in wide temperature range
Güçlü, Çiğdem Ş., Özdemir, Ahmet Faruk, Altindal, ŞemsettinVolume:
122
Language:
english
Journal:
Applied Physics A
DOI:
10.1007/s00339-016-0558-x
Date:
December, 2016
File:
PDF, 1.07 MB
english, 2016