Determination of partial dislocations of stacking fault in...

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Journal of Crystal Growth 2016 / 11

Determination of partial dislocations of stacking fault in (111) single crystal diamond grown on (111) seed crystal by synchrotron X-ray topography

Masuya, Satoshi, Hanada, Kenji, Moribayashi, Tomoya, Sumiya, Hitoshi, Kasu, Makoto
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Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2016.11.094
Date:
November, 2016
File:
PDF, 1.44 MB
english, 2016
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