High-Mobility P-Type MOSFETs with Integrated Strained-Si...

Chinese Physics Letters 2016 / 11 Vol. 33; Iss. 11

High-Mobility P-Type MOSFETs with Integrated Strained-Si 0.73 Ge 0.27 Channels and High-κ/Metal Gates

Mao, Shu-Juan, Zhu, Zheng-Yong, Wang, Gui-Lei, Zhu, Hui-Long, Li, Jun-Feng, Zhao, Chao
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Volume:
33
Language:
english
Journal:
Chinese Physics Letters
DOI:
10.1088/0256-307X/33/11/118502
Date:
November, 2016
File:
PDF, 659 KB
english, 2016
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