Prospects of High-Ge-Content Strained SiGe for Advanced...

ECS Transactions 2016 / 09 Vol. 75; Iss. 8

Prospects of High-Ge-Content Strained SiGe for Advanced FinFET Generations

Hashemi, P., Balakrishnan, K., Ando, T., Bruley, J., Ott, J. A., Engelmann, S., Chan, K., Lee, K.-L., Park, D.-G., Mo, R. T., Leobandung, E.
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Volume:
75
Language:
english
Journal:
ECS Transactions
DOI:
10.1149/07508.0039ecst
Date:
September, 2016
File:
PDF, 507 KB
english, 2016
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