Erratum: The impact of trapping centers on AlGaN/GaN...

IEICE Electronics Express 2013 Vol. 10; Iss. 24

Erratum: The impact of trapping centers on AlGaN/GaN resonant tunneling diode [IEICE Electronics Express Vol. 10 (2013) No. 19 pp. 20130588]

Chen, Haoran, Yang, Lin^|^apos, an, Liu, Xiaoxian, Zhu, Zhangming, Luo, Jun, Hao, Yue
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Volume:
10
Year:
2013
Journal:
IEICE Electronics Express
DOI:
10.1587/elex.10.20138002
File:
PDF, 186 KB
2013
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