A 0.2 V–1.8 V 8T SRAM with Bit-interleaving Capability

IEICE Electronics Express 2014 Vol. 11; Iss. 8

A 0.2 V–1.8 V 8T SRAM with Bit-interleaving Capability

Zhao, Hui, Fan, Shiquan, Chen, Leicheng, Song, Yan, Geng, Li
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Volume:
11
Year:
2014
Language:
english
Journal:
IEICE Electronics Express
DOI:
10.1587/elex.11.20140229
File:
PDF, 2.43 MB
english, 2014
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