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Hafnium-nitride gate insulator formed by electron-cyclotron-resonance plasma sputtering
Han, Huiseong, Ohmi, Shun-ichiroVolume:
9
Year:
2012
Language:
english
Journal:
IEICE Electronics Express
DOI:
10.1587/elex.9.1329
File:
PDF, 437 KB
english, 2012