Effective Schottky barrier lowering of Ni...

Materials & Design 2016 / 11

Effective Schottky barrier lowering of Ni silicide/p-Si(100) using an ytterbium confinement structure for high performance n-type MOSFETs

Shen, Keng-Hui, Chen, Szu-Hung, Liu, Wei-Ting, Wu, Bao-Hsien, Chen, Lih-Juann
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Language:
english
Journal:
Materials & Design
DOI:
10.1016/j.matdes.2016.11.084
Date:
November, 2016
File:
PDF, 1.50 MB
english, 2016
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