The influence of the N+ floating layer on the drift doping of RESURF LDMOS and its analytical model
Hu, Xiarong, Wang, Weibo, Ji, Yupin, Hua, QingVolume:
13
Year:
2016
Language:
english
Journal:
IEICE Electronics Express
DOI:
10.1587/elex.13.20160852
File:
PDF, 1.56 MB
english, 2016