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Design Choice in 45-nm Dual-Port SRAM — 8T, 10T Single End, and 10T Differential
Noguchi, Hiroki, Iguchi, Yusuke, Fujiwara, Hidehiro, Okumura, Shunsuke, Nii, Koji, Kawaguchi, Hiroshi, Yoshimoto, MasahikoVolume:
4
Year:
2011
Language:
english
Journal:
IPSJ Transactions on System LSI Design Methodology
DOI:
10.2197/ipsjtsldm.4.80
File:
PDF, 2.48 MB
english, 2011