Normally-off AlGaN/AlN/GaN/Si oxide-passivated HEMTs and...

Materials Science in Semiconductor Processing 2017 / 03 Vol. 59

Normally-off AlGaN/AlN/GaN/Si oxide-passivated HEMTs and MOS-HEMTs by using CF4 plasma and ozone water oxidization treatment

Lee, Ching-Sung, Liu, Han-Yi, Hsu, Wei-Chou, Chen, Si-Fu
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Volume:
59
Language:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2016.11.037
Date:
March, 2017
File:
PDF, 545 KB
english, 2017
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