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Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition
Niu, Gang, Kim, Hee-Dong, Roelofs, Robin, Perez, Eduardo, Schubert, Markus Andreas, Zaumseil, Peter, Costina, Ioan, Wenger, ChristianVolume:
6
Language:
english
Journal:
Scientific Reports
DOI:
10.1038/srep28155
Date:
June, 2016
File:
PDF, 1.79 MB
english, 2016