(Invited) Evaluation of Few-Layer MoS2 Transistors with a...

ECS Transactions 2016 / 09 Vol. 75; Iss. 5

(Invited) Evaluation of Few-Layer MoS2 Transistors with a Top Gate and HfO2 Dielectric

Young, C. D., Zhao, P., Bolshakov-Barrett, P., Azcatl, A., Hurley, P. K., Gomeniuk, Y. Y., Schmidt, M., Hinkle, C. L., Wallace, R. M.
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Volume:
75
Language:
english
Journal:
ECS Transactions
DOI:
10.1149/07505.0153ecst
Date:
September, 2016
File:
PDF, 587 KB
english, 2016
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