CVD Material Processing. Effects of Pressure and Gas Feed Rate on Growth Rate Profile of GaN Thin Film in Vertical MOCVD Reactor.
SHIMADA, MANABU, OKUYAMA, KIKUO, Setyawan, Heru, IYECHIKA, YASUSHI, MAEDA, TAKAYOSHIVolume:
26
Year:
2000
Journal:
KAGAKU KOGAKU RONBUNSHU
DOI:
10.1252/kakoronbunshu.26.804
File:
PDF, 1.39 MB
2000