Study of non-radiative silicon deexcitation in an oxygen...

Applied Physics A: Materials Science & Processing 1977 / 11 Vol. 14; Iss. 3

Study of non-radiative silicon deexcitation in an oxygen atmosphere using the differential measurement of the excited state lifetimes

J. Azencot, R. Goutte
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Volume:
14
Language:
english
Pages:
9
DOI:
10.1007/bf00882736
Date:
November, 1977
File:
PDF, 563 KB
english, 1977
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