First-Principles-Calculation Method for Optimizing Strain...

JSME International Journal Series A 2005 Vol. 48; Iss. 1

First-Principles-Calculation Method for Optimizing Strain to Reduce Gate Leakage Current in MOS Transistors with Silicon Oxynitride Gate Dielectrics

KANEGAE, Yoshiharu, MORIYA, Hiroshi, IWASAKI, Tomio
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Volume:
48
Year:
2005
Language:
english
Journal:
JSME International Journal Series A
DOI:
10.1299/jsmea.48.14
File:
PDF, 807 KB
english, 2005
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