High voltage (^|^gt;1100V) SOI LDMOS with an accumulated...

IEICE Electronics Express 2013 Vol. 10; Iss. 4

High voltage (^|^gt;1100V) SOI LDMOS with an accumulated charges layer for double enhanced dielectric electric field

Yang, Xiaoming, Li, Tianqian, Cai, Yu, Wang, Jun, Chen, Changjiang
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Volume:
10
Year:
2013
Language:
english
Journal:
IEICE Electronics Express
DOI:
10.1587/elex.10.20130057
File:
PDF, 1.46 MB
english, 2013
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