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Characterization of punch-through phenomenon in SiC-SBD by capacitance-voltage measurement at high reverse bias voltage
Funaki, Tsuyoshi, Matsuzaki, Shuntaro, Kimoto, Tsunenobu, Hikihara, TakashiVolume:
3
Year:
2006
Language:
english
Journal:
IEICE Electronics Express
DOI:
10.1587/elex.3.379
File:
PDF, 362 KB
english, 2006