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(Bi,La)4Ti3O12 as a ferroelectric layer and SrTa2O6 as a buffer layer for metal-ferroelectric-metal-insulator-semiconductor field-effect transistor
KIM, Joo-Nam, CHOI, Yun-Soo, PARK, Byung-EunVolume:
117
Year:
2009
Language:
english
Journal:
Journal of the Ceramic Society of Japan
DOI:
10.2109/jcersj2.117.1032
File:
PDF, 494 KB
english, 2009