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Effect of Annealing Ambient on Structural and Electrical Properties of Ge Metal-Oxide-Semiconductor Capacitors with Pt Gate Electrode and HfO2 Gate Dielectric
Chandra, S. V. Jagadeesh, Jeong, Myung-Il, Park, Yun-Chang, Yoon, Jong-Won, Choi, Chel-JongVolume:
52
Year:
2011
Language:
english
Journal:
MATERIALS TRANSACTIONS
DOI:
10.2320/matertrans.m2010324
File:
PDF, 2.17 MB
english, 2011