[IEEE 2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) - Austin, TX, USA (2016.10.23-2016.10.26)] 2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) - Physical Model of RF Leakage in GaN HEMTs on Si Substrates Based on Atomic Diffusion Analysis at Buffer/Substrate Interface
Yamaguchi, Yutaro, Kamioka, Jun, Shinjo, Shintaro, Yamanaka, Koji, Oishi, ToshiyukiYear:
2016
Language:
english
DOI:
10.1109/csics.2016.7751058
File:
PDF, 1.46 MB
english, 2016