Varying nitrogen background pressure; an efficient approach to improve electrical properties of MBE-grown GaAs1−xNx thin films with less atomic disorder
Biswas, Mahitosh, Shinde, Nilesh, Makkar, Roshan, Bhatnagar, Anuj, Chakrabarti, SubhanandaLanguage:
english
Journal:
Journal of Alloys and Compounds
DOI:
10.1016/j.jallcom.2016.11.328
Date:
November, 2016
File:
PDF, 1005 KB
english, 2016