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Optimization design on breakdown voltage of AlGaN/GaN high-electron mobility transistor
Liu, Yang, Chai, Changchun, Shi, Chunlei, Fan, Qingyang, Liu, YuqianVolume:
37
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/37/12/124002
Date:
December, 2016
File:
PDF, 996 KB
english, 2016