High Temperature Transport Property of B- and P-Doped GeSi...

MATERIALS TRANSACTIONS 2001 Vol. 42; Iss. 6

High Temperature Transport Property of B- and P-Doped GeSi Single Crystals Prepared by a Czochralski Method

Akashi, Takaya, Yonenaga, Ichiro, Gunjishima, Itaru, Goto, Takashi
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Volume:
42
Year:
2001
Journal:
MATERIALS TRANSACTIONS
DOI:
10.2320/matertrans.42.1024
File:
PDF, 577 KB
2001
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