Development of Contact Materials for Semiconductor Devices....

Materia Japan 1994 Vol. 33; Iss. 6

Development of Contact Materials for Semiconductor Devices. Diffusion of Silicon into Gallium Arsenide.

Matsushita, Shigeharu, Terada, Satoshi, Fujii, Emi, Harada, Yasoo
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Volume:
33
Year:
1994
Journal:
Materia Japan
DOI:
10.2320/materia.33.715
File:
PDF, 1.31 MB
1994
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