Ab-initio Calculation of Si-K and Si-L ELNES Edges in an Extended Inactive Defect Model of Crystalline Silicon
Chen, Yu, Mo, Shang-Di, Kohyama, Masanori, Kohno, Hideo, Takeda, Seiji, Ching, Wai-YimVolume:
43
Year:
2002
Language:
english
Journal:
MATERIALS TRANSACTIONS
DOI:
10.2320/matertrans.43.1430
File:
PDF, 170 KB
english, 2002