Crystal Nucleation Behavior Caused by Annealing of SiC...

MATERIALS TRANSACTIONS 2007 Vol. 48; Iss. 7

Crystal Nucleation Behavior Caused by Annealing of SiC Irradiated with Ne at Liquid Nitrogen Temperature or at 573 K

Aihara, Jun, Hojou, Kiichi, Furuno, Shigemi, Hojo, Tomohiro, Sawa, Kazuhiro, Yamamoto, Hiroyuki, Motohashi, Yoshinobu
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Volume:
48
Year:
2007
Language:
english
Journal:
MATERIALS TRANSACTIONS
DOI:
10.2320/matertrans.mra2007608
File:
PDF, 224 KB
english, 2007
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