Flatband Voltage Shift Depending on SiO2/SiC Interface...

Materials Science Forum 2016 / 5 Vol. 858

Flatband Voltage Shift Depending on SiO2/SiC Interface Charges in 4H-SiC MOS Capacitors with AlON/SiO2 Stacked Gate Dielectrics

Hosoi, Takuji, Azumo, Shuji, Yamamoto, Kenji, Aketa, Masatoshi, Kashiwagi, Yusaku, Hosaka, Shigetoshi, Asahara, Hirokazu, Nakamura, Takashi, Shimura, Takayoshi, Watanabe, Heiji
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Volume:
858
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.858.681
Date:
May, 2016
File:
PDF, 253 KB
english, 2016
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