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The Impact of Technology Scaling on the Single-Event Transient Response of SiGe HBTs
Lourenco, Nelson E., Fleetwood, Zachary E., Ildefonso, Adrian, Wachter, Mason T., Roche, Nicolas J.-H., Khachatrian, Ani, McMorrow, Dale, Buchner, Stephen P., Warner, Jeffrey H., Itsuji, Hiroaki, KobaVolume:
64
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/tns.2016.2633997
Date:
January, 2017
File:
PDF, 1.15 MB
english, 2017