3-D Quasi-Atomistic Model for Line Edge Roughness in...

IEEE Transactions on Electron Devices 2016 / 12 Vol. 63; Iss. 12

3-D Quasi-Atomistic Model for Line Edge Roughness in Nonplanar MOSFETs

Oh, Sangheon, Shin, Changhwan
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Volume:
63
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2016.2614490
Date:
December, 2016
File:
PDF, 1.78 MB
english, 2016
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