The effect of the transformation of point defects under Joule heating on efficiency of LEDs with InGaN/GaN quantum wells
Bochkareva, N. I., Ivanov, A. M., Klochkov, A. V., Tarala, V. A., Shreter, Yu. G.Volume:
42
Language:
english
Journal:
Technical Physics Letters
DOI:
10.1134/S1063785016110146
Date:
November, 2016
File:
PDF, 586 KB
english, 2016