Physical Differences in Hot Carrier Degradation of Oxide...

IEEE Transactions on Electron Devices 2017 / 1 Vol. 64; Iss. 1

Physical Differences in Hot Carrier Degradation of Oxide Interfaces in Complementary (n-p-n+p-n-p) SiGe HBTs

Raghunathan, Uppili S., Ying, Hanbin, Wier, Brian R., Omprakash, Anup P., Chakraborty, Partha S., Bantu, Tikurete G., Yasuda, Hiroshi, Menz, Philip, Cressler, John D.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
64
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2016.2631982
Date:
January, 2017
File:
PDF, 1.50 MB
english, 2017
Conversion to is in progress
Conversion to is failed