Pyramidal defects in highly Mg-doped GaN: atomic structure...

The European Physical Journal Applied Physics 2004 / 07 Vol. 27; Iss. 1-3

Pyramidal defects in highly Mg-doped GaN: atomic structure and influence on optoelectronic properties

Leroux, M., Vennéguès, P., Dalmasso, S., de Mierry, P., Lorenzini, P., Damilano, B., Beaumont, B., Gibart, P., Massies, J.
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Volume:
27
Language:
english
Journal:
The European Physical Journal Applied Physics
DOI:
10.1051/epjap:2004119-2
Date:
July, 2004
File:
PDF, 1.41 MB
english, 2004
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