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Comparison of GaN/AlGaN/AlN/GaN HEMTs Grown on Sapphire with Fe-Modulation-Doped and Unintentionally Doped GaN Buffer: Material Growth and Device Fabrication
Gong, Jia-Min, Wang, Quan, Yan, Jun-Da, Liu, Feng-Qi, Feng, Chun, Wang, Xiao-Liang, Wang, Zhan-GuoVolume:
33
Language:
english
Journal:
Chinese Physics Letters
DOI:
10.1088/0256-307X/33/11/117303
Date:
November, 2016
File:
PDF, 693 KB
english, 2016