Developments in understanding the nucleation of AlN on...

Developments in understanding the nucleation of AlN on silicon by MOCVD and its effects on defects

Charles, Matthew, Bavard, Alexis, Bouis, Renan, Baines, Yannick, Escoffier, René
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Volume:
214
Language:
english
Journal:
physica status solidi (a)
DOI:
10.1002/pssa.201600431
Date:
April, 2017
File:
PDF, 727 KB
english, 2017
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