Analysis of TID Process, Geometry, and Bias Condition Dependence in 14-nm FinFETs and Implications for RF and SRAM Performance
King, M. P., Wu, X., Eller, M., Samavedam, S., Shaneyfelt, M. R., Silva, A. I., Draper, B. L., Rice, W. C., Meisenheimer, T. L., Felix, J. A., Zhang, E. X., Haeffner, T. D., Ball, D. R., Shetler, K. JVolume:
64
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/TNS.2016.2634538
Date:
January, 2017
File:
PDF, 1.15 MB
english, 2017