Reduction of Phonon Escape Time for NbN Hot Electron...

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IEEE Transactions on Terahertz Science and Technology 2016

Reduction of Phonon Escape Time for NbN Hot Electron Bolometers by Using GaN Buffer Layers

Krause, Sascha, Mityashkin, Vladislav, Antipov, Sergey, Goltsman, Gregory, Meledin, Denis, Desmaris, Vincent, Belitsky, Victor, Rudzinski, Mariusz
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Year:
2016
Language:
english
Journal:
IEEE Transactions on Terahertz Science and Technology
DOI:
10.1109/TTHZ.2016.2630845
File:
PDF, 987 KB
english, 2016
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