[IEEE 2016 16th Non-Volatile Memory Technology Symposium (NVMTS) - Pittsburgh, PA, USA (2016.10.17-2016.10.19)] 2016 16th Non-Volatile Memory Technology Symposium (NVMTS) - High endurance strategies for hafnium oxide based ferroelectric field effect transistor
Muller, J., Polakowski, P., Muller, S., Mulaosmanovic, H., Ocker, J., Mikolajick, T., Slesazeck, S., Muller, S., Ocker, J., Mikolajick, T., Flachowsky, S., Trentzsch, M.Year:
2016
Language:
english
DOI:
10.1109/NVMTS.2016.7781517
File:
PDF, 534 KB
english, 2016