Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2017 / 01 Vol. 35; Iss. 1
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Effects of interface states and near interface traps on the threshold voltage stability of GaN and SiC transistors employing SiO 2 as gate dielectric
Fiorenza, Patrick, Greco, Giuseppe, Giannazzo, Filippo, Iucolano, Ferdinando, Roccaforte, FabrizioVolume:
35
Language:
english
Journal:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
DOI:
10.1116/1.4967306
Date:
January, 2017
File:
PDF, 1.27 MB
english, 2017