Possibility of the use of intermediate carbidsiliconoxide...

Semiconductors 2016 / 4 Vol. 50; Iss. 4

Possibility of the use of intermediate carbidsiliconoxide nanolayers on polydiamond substrates for gallium nitride layers epitaxy

Averichkin, P. A., Donskov, A. A., Dukhnovsky, M. P., Knyazev, S. N., Kozlova, Yu. P., Yugova, T. G., Belogorokhov, I. A.
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Volume:
50
Language:
english
Journal:
Semiconductors
DOI:
10.1134/s1063782616040047
Date:
April, 2016
File:
PDF, 447 KB
english, 2016
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