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Design strategy of two-dimensional material field-effect transistors: Engineering the number of layers in phosphorene FETs
Yin, Demin, Yoon, YoungkiVolume:
119
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4953256
Date:
June, 2016
File:
PDF, 1.59 MB
english, 2016