Synthesis of Highly Anisotropic Semiconducting GaTe...

Advanced Materials 2017 / 02 Vol. 29; Iss. 8

Synthesis of Highly Anisotropic Semiconducting GaTe Nanomaterials and Emerging Properties Enabled by Epitaxy

Cai, Hui, Chen, Bin, Wang, Gang, Soignard, Emmanuel, Khosravi, Afsaneh, Manca, Marco, Marie, Xavier, Chang, Shery L. Y., Urbaszek, Bernhard, Tongay, Sefaattin
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Volume:
29
Language:
english
Journal:
Advanced Materials
DOI:
10.1002/adma.201605551
Date:
February, 2017
File:
PDF, 2.43 MB
english, 2017
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