Characterization of MBE-grown InAlN/GaN heterostructure...

AIP Advances 2016 / 03 Vol. 6; Iss. 3

Characterization of MBE-grown InAlN/GaN heterostructure valence band offsets with varying In composition

Collar, Kristen, Kim, Tong-Ho, Losurdo, Maria, Brown, April S.
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Volume:
6
Language:
english
Journal:
AIP Advances
DOI:
10.1063/1.4944502
Date:
March, 2016
File:
PDF, 1.02 MB
english, 2016
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