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Impact of LT-GaAs layers on crystalline properties of the epitaxial GaAs films grown by MBE on Si substrates
Petrushkov, M O, Putyato, M A, Gutakovsky, A K, Preobrazhenskii, V V, Loshkarev, I D, Emelyanov, E A, Semyagin, B R, Vasev, A VVolume:
741
Language:
english
Journal:
Journal of Physics: Conference Series
DOI:
10.1088/1742-6596/741/1/012020
Date:
August, 2016
File:
PDF, 1.06 MB
english, 2016