Electrothermal Simulation-Based Comparison of 4H-SiC p-i-n,...

IEEE Transactions on Plasma Science 2017 / 1 Vol. 45; Iss. 1

Electrothermal Simulation-Based Comparison of 4H-SiC p-i-n, Schottky, and JBS Diodes Under High Current Density Pulsed Operation

Pushpakaran, Bejoy N., Bayne, Stephen B., Ogunniyi, Aderinto A.
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Volume:
45
Language:
english
Journal:
IEEE Transactions on Plasma Science
DOI:
10.1109/TPS.2016.2636214
Date:
January, 2017
File:
PDF, 3.91 MB
english, 2017
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