Influence of residual carbon impurities in i-GaN layer on...

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2016 / 01 Vol. 34; Iss. 1

Influence of residual carbon impurities in i-GaN layer on the performance of GaN-based p-i-n photodetectors

Li, Xiaojing, Zhao, Degang, Jiang, Desheng, Chen, Ping, Zhu, Jianjun, Liu, Zongshun, Le, Lingcong, Yang, Jing, He, Xiaoguang, Zhang, Liqun, Zhang, Shuming, Liu, Jianping, Yang, Hui
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
34
Language:
english
Journal:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
DOI:
10.1116/1.4936882
Date:
January, 2016
File:
PDF, 519 KB
english, 2016
Conversion to is in progress
Conversion to is failed