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AlN and Al oxy-nitride gate dielectrics for reliable gate stacks on Ge and InGaAs channels
Guo, Y., Li, H., Robertson, J.Volume:
119
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4951004
Date:
May, 2016
File:
PDF, 2.09 MB
english, 2016