![](/img/cover-not-exists.png)
Limitations of threshold voltage engineering of AlGaN/GaN heterostructures by dielectric interface charge density and manipulation by oxygen plasma surface treatments
Lükens, G., Yacoub, H., Kalisch, H., Vescan, A.Volume:
119
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4952382
Date:
May, 2016
File:
PDF, 1.11 MB
english, 2016